官方微信
友情鏈接

The 2D InSe/WS2 Heterostructure with Enhanced Optoelectronic Performance in the Visible Region

2019-10-08

Authors: Yang, LL; Shi, JJ; Zhang, M; Wei, ZM; Ding, YM; Wu, M; He, Y; Cen, YL; Guo, WH; Pan, SH; Zhu, YH

CHINESE PHYSICS LETTERS

Volume: 36 Issue: 9 Published: SEP 2019 Language: English Document type: Article

DOI: 10.1088/0256-307X/36/9/097301

Abstract:

Two-dimensional (2D) InSe and WS2 exhibit promising characteristics for optoelectronic applications. However, they both have poor absorption of visible light due to wide bandgaps: 2D InSe has high electron mobility but low hole mobility, while 2D WS2 is on the contrary. We propose a 2D heterostructure composed of their monolayers as a solution to both problems. Our first-principles calculations show that the heterostructure has a type-II band alignment as expected. Consequently, the bandgap of the heterostructure is reduced to 2.19eV, which is much smaller than those of the monolayers. The reduction in bandgap leads to a considerable enhancement of the visible-light absorption, such as about fivefold (threefold) increase in comparison to monolayer InSe (WS2) at the wavelength of 490 nm. Meanwhile, the type-II band alignment also facilitates the spatial separation of photogenerated electron-hole pairs; i.e., electrons (holes) reside preferably in the InSe (WS2) layer. As a result, the two layers complement each other in carrier mobilities of the heterostructure: the photogenerated electrons and holes inherit the large mobilities from the InSe and WS2 monolayers, respectively.

Full Text: https://iopscience.iop.org/article/10.1088/0256-307X/36/9/097301



關于我們
下載視頻觀看
聯系方式
通信地址

北京市海淀區清華東路甲35號 北京912信箱 (100083)

電話

010-82304210/010-82305052(傳真)

E-mail

交通地圖
版權所有 ? 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明